vishay byw32 to byw36 document number 86048 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 1 949539 fast avalanche sinterglass diode \ features ? glass passivated junction hermetically sealed package low reverse current soft recovery characteristics applications fast rectification and switching diode for example for tv-line output circuits and switch mode power supply mechanical data case: sintered glass case, sod 57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 370 mg, (max. 500 mg) parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package byw32 v r = 200 v; i fav = 2 a sod57 BYW33 v r = 300 v; i fav = 2 a sod57 byw34 v r = 400 v; i fav = 2 a sod57 byw35 v r = 500 v; i fav = 2 a sod57 byw36 v r = 600 v; i fav = 2 a sod57 parameter te s t c o n d i t i o n sub type symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw32 v r = v rrm 200 v see electrical characteristics BYW33 v r = v rrm 300 v see electrical characteristics byw34 v r = v rrm 400 v see electrical characteristics byw35 v r = v rrm 500 v see electrical characteristics byw36 v r = v rrm 600 v peak forward surge current t p = 10 ms, half sinewave i fsm 50 a repetitive peak forward current i frm 12 a average forward current ? = 180 i fav 2 a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj
www.vishay.com 2 document number 86048 rev. 5, 07-jan-03 vishay byw32 to byw36 vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition sub type symbol value unit junction ambient l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w parameter test condition sub type symbol min ty p. max unit forward voltage i f = 1 a v f 0.95 1.1 v reverse current v r = v rrm i r 1 5 a v r = v rrm , t j = 150 c i r 60 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr 200 ns figure 1. max. thermal resistance vs. lead length figure 2. forward current vs. forward voltage 0 0 20 40 60 80 120 r ? therm. resist. junction / ambient ( k/w ) thja l ? lead length ( mm ) 94 9552 51015 25 30 20 100 ll t l =constant i ? forward current ( a) 0.001 0.010 0.100 1.000 10.000 100.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f ? forward voltage ( v ) 16345 f t j =25 c t j =175 c figure 3. max. average forward current vs. ambient temperature figure 4. reverse current vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 160 180 t amb ? ambient temperature ( c ) 16346 i ? average forward current ( a ) fav v r =v rrm half sinewave r thja =45k/w l=10mm r thja =100k/w pcb: d=25mm 1 10 100 1000 25 50 75 100 125 150 175 t j ? junction temperature ( c ) 16347 v r = v rrm i ? reverse current ( a ) r
vishay byw32 to byw36 document number 86048 rev. 5, 07-jan-03 vishay semiconductors www.vishay.com 3 package dimensions in mm figure 5. max. reverse power dissipation vs. junction temperature 0 50 100 150 200 250 300 25 50 75 100 125 150 175 t j ? junction temperature ( c ) 16348 v r = v rrm p ? reverse power dissipation ( mw ) r p r ?limit @100%v r p r ?limit @80%v r figure 6. diode capacitance vs. reverse voltage 0 5 10 15 20 25 30 35 40 0.1 1.0 10.0 100.0 v r ? reverse voltage ( v ) 16349 c ? diode capacitance ( pf ) d f=1mhz 1 10 100 1000 z ? thermal resistance for pulse cond. (k/w) thp t p ? pulse length ( s ) 94 9561 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 i frm ? repetitive peak forward current ( a ) 10 0 10 1 v rrm =600v r thja =100k/w t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.02 t p /t=0.01 t amb =25 c 45 c 50 c 70 c 100 c single pulse figure 7. thermal response cathode identification ? 3.6 max. ? 0.82 max. 4.2 max. sintered glass case sod 57 weight max. 0.5g technical drawings according to din specifications 94 9538 26 min. 26 min.
www.vishay.com 4 document number 86048 rev. 5, 07-jan-03 vishay byw32 to byw36 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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